%0 Journal Article
%T Characterization of ZnO Thin Films Grown by SILAR Method
%A A. Raidou
%A F. Benmalek
%A T. Sall
%A M. Aggour
%A A. Qachaou
%A L. Laanab
%A M. Fahoume
%J Open Access Library Journal
%V 1
%N 3
%P 1-9
%@ 2333-9721
%D 2014
%I Open Access Library
%R 10.4236/oalib.1100588
%X <p class="MsoNormal">
	<span lang="EN-GB">Zinc
oxide (ZnO) thin films have been deposited using a SILAR (Successive Ionic
Layer Adsorption and Reaction) technique, which is based on the alternate
dipping of substrate in the solution and distilled water. The thin films were
grown on copper, silicon and glass substrates. The precursors for ZnO films
were diluted aqueous solution ZnSO<sub>4</sub> complexed with NH<sub>3</sub>.
The films were investigated by X-ray diffraction, scanning electron microscopy,
XPS spectroscopy and spectrophotometer. XRD measurement showed that the films
were crystallized in the wurtzite phase type with preferred orientation (002).
X-ray photoelectron spectroscopy (XPS) was used to monitor changes in oxidation
state of ZnO thin films. The XPS peaks of the O<sub>1s</sub>, Zn<sub>2p3/2</sub> and Zn<sub>2p1/2</sub> were used for studding the ZnO film. The results of
influence of different parameters of SILAR method on phase structure, surface
morphology, and optical properties are studied and discussed.</span>
</p>
%K ZnO
%K Substrates Effect
%K Thin Films
%K Optical Properties
%U http://www.oalib.com/paper/3064760