%0 Journal Article
%T Improved Photovoltaic Properties of Heterojunction Carbon Based Solar Cell
%A Sudip Adhikari
%A M. S. Kayastha
%A H. R. Aryal
%A S. Adhikary
%A T. Takeuchi
%A K. Murakami
%A Y. Kawashimo
%A H. Uchida
%A K. Wakita
%A M. Umeno
%A D. C. Ghimire
%J Journal of Surface Engineered Materials and Advanced Technology
%P 178-183
%@ 2161-489X
%D 2013
%I Scientific Research Publishing
%R 10.4236/jsemat.2013.33024
%X <p class=\"MsoNormal\">
	<span lang=\"EN-US\" style=\"font-family:Verdana;\">Amorphous carbon (a-C) thin films have
been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor
deposition (CVD) on n-type silicon and quartz substrates, aiming </span><span lang=\"EN-US\" style=\"font-family:Verdana;\">at </span><span lang=\"EN-US\"><span style=\"font-family:Verdana;\">the application of the films for photovoltaic
solar cells. Argon, acetylene and trimethylboron were used as a carrier, source
and dopant gases. Analytical methods such as X-ray photoelectron spectroscopy
(XPS), Hall Effect measurement, JASCO V-570 UV/VIS/NIR spectroscopy, Raman
spectroscopy, Transmission electron microscopy (TEM) and Solar simulator were
employed to investigate chemical, optical, structural and electrical properties
of the a-C films. Two types of solar cells of configuration p-C/n-Si and
p-C/i-C/n-Si have been fabricated and their current-voltage characteristics
under dark and illumination (AM 1.5, 100 mW/cm</span><sup><span style=\"font-family:Verdana;\">2</span></sup><span style=\"font-family:Verdana;\">) have been studied.
The </span></span><span lang=\"EN-US\" style=\"font-family:Verdana;\">two</span><span lang=\"EN-US\" style=\"font-family:Verdana;\"> solar cells
showed rectifying curves under the dark condition confirming the heterojunction
carbon based solar cell between p-C and n-Si. When illuminated by the solar
simulator light the devices showed photovoltaic behavior. The heterojunction
device (p-C/i-C/n-Si) having inserted intrinsic carbon film between p-C and
n-Si exhibited significant enhancement of the conversation efficiency (0.167%
to 2.349%) over the device (p-C/n-Si).</span><span lang=\"EN-US\"><o:p></o:p></span> 
</p>
%K Carbon
%K Photovoltaic Properties
%K Heterojunction Solar Cell
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=34219