%0 Journal Article
%T Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universially true (?)
%A Prakash R. Somani
%A A. Kobayashi
%A Y. Ohno
%A S. Kishimoto
%J Carbon : Science and Technology
%D 2009
%I Applied Science Innovations Private Limited
%X Our study on nickel silicide and gold contacted single-wall-carbon-nanotube field effect transistors (SWCN-FETs) is in sharp contrast to earlier published reports of type conversion in SWCN-FETs (from p- to n-) when cycled between air and vacuum, and indicates that (1) band gap of SWCN (2) the extent to which Fermi level of the metal contact gets shifted due to adsorption/desorption of oxygen and (3) relative position of the Fermi level of the metal contact with respect to the top of the valance band of SWCN (in an oxygen-free environment) are some of the important factors that governs such phenomena.
%K Single wall carbon nanotube
%K Field Effect Transistor
%K Nickel Silicide
%K Type conversion in air and vacuum
%U http://www.applied-science-innovations.com/cst-web-site/cst-2-2/CST%20-%2023.pdf