%0 Journal Article
%T 氧气通量对反应溅射法制备HfO<sub>2</sub>薄膜生长过程的影响<br>Effect of O<sub>2</sub> Flux on the Growth Process of HfO2 Thin Films Deposited by Reactive Sputtering
%A 杨宇桐
%A 唐武
%J Advances in Condensed Matter Physics
%P 12-16
%@ 2326-3520
%D 2013
%I Hans Publishing
%R 10.12677/CMP.2013.21003
%X <div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">利用金属</span><span style=\"line-height:1.5;\">Hf</span><span style=\"line-height:1.5;\">与氧气反应溅射制备了</span><span style=\"line-height:1.5;\">Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span style=\"line-height:1.5;\">薄膜，采用</span><span style=\"line-height:1.5;\">X</span><span style=\"line-height:1.5;\">射线光电子能谱分析</span><span style=\"line-height:1.5;\">(XPS)</span><span style=\"line-height:1.5;\">、原子力显微镜</span><span style=\"line-height:1.5;\">(AFM)</span><span style=\"line-height:1.5;\">等手段对薄膜的组成成分以及表面形貌进行了分析表征，并从薄膜生长机理角度研究了氧气的通量对于</span><span style=\"line-height:1.5;\">Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span style=\"line-height:1.5;\">成膜过程的影响，得到了氧气通量的增大能使</span><span style=\"line-height:1.5;\">Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span style=\"line-height:1.5;\">薄膜的化学配比、非晶结构和表面形貌得到优化的结论。</span> 
</div>
<div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span style=\"line-height:1.5;\"> thin films are deposited by reactive sputtering under atmospheres composited by various ratios of oxygen and argon. The chemical composition of the Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span style=\"line-height:1.5;\"> thin films is tested by X-ray photoelectron spectroscopy (XPS). The surface morphology of the Hf<a name=\"OLE_LINK28\"></a><a name=\"OLE_LINK25\"></a><a name=\"OLE_LINK24\"></a><a name=\"OLE_LINK23\"></a><span style=\"font-size:10.5pt;font-family:&quot;\">O&lt;sub&gt;2&lt;/sub&gt;</span></span><span style=\"line-height:1.5;\"></span><span
%K HfO<sub>2</sub>薄膜；射频磁控反应溅射；XPS；AFM<br> HfO<sub>2</sub> Film
%K RF Magnetron Reactive Sputtering
%K XPS
%K AFM
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=9421