%0 Journal Article
%T ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H-SIC FOR HIGH TEMPERATURE DEVICE MODELING
%A HADI ARABSHAHI
%A MAHMOOD REZAEE ROKN-ABADI
%J Journal of Science and Arts
%D 2010
%I Bibliotheca Publishing House
%X The Monte Carlo method is used to simulate electron transport in bulk w¨¹rtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the  , K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 1016-1020 cm-3, respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.
%K Monte Carlo
%K non-parabolic
%K velocity overshoot
%K ionized donor
%K Brillouin zone.
%U http://www.icstm.ro/DOCS/josa/josa_2010_2/c.12_ELECTRON_TRANSPORT_CHARACTERISTICS_OF_6H_SIC_AND_4H_SIC_FOR_HIGH_TEMPERATURE_DEVICE_MODELING.pdf