%0 Journal Article
%T Efficient Time-Domain Signal and Noise FET Models for Millimetre-Wave Applications
%A Shahrooz Asadi
%A Mustapha C. E. Yagoub
%J Journal of Electromagnetic Analysis and Applications
%P 23-31
%@ 1942-0749
%D 2013
%I Scientific Research Publishing
%R 10.4236/jemaa.2013.51005
%X <p class=\"MsoNormal\" style=\"text-align:justify;\">
	<span lang=\"EN-CA\">Based on the
active coupled line concept, a novel approach for efficient signal and noise
modeling of millimeter-wave field-effect transistors is proposed. The
distributed model considers the effect of wave propagation along the device
electrodes, which can significantly affect the device performance especially in
the millimetre-wave range. By solving the multi-conductor transmission line
equations using the Finite-Difference Time-Domain technique, the proposed procedure
can accurately determine the signal and noise performance of the transistor. In
order to demonstrate the proposed FET model accuracy, a distributed low-noise amplifier
was designed and tested. A model selection is often a trade-off between
procedure complexity and response accuracy. Using the proposed distributed
model versus the circuit-based model will allow increasing the model frequency
range.</span><span lang=\"EN-US\"><o:p></o:p></span> 
</p>
%K Distributed Model
%K FDTD
%K Noise Correlation Matrix
%K FET
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=27314