%0 Journal Article
%T New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature
%A Amine Touati
%A Samir Chatbouri
%A Nabil Sghaier
%A Adel Kalboussi
%J World Journal of Nano Science and Engineering
%P 171-175
%@ 2161-4962
%D 2012
%I Scientific Research Publishing
%R 10.4236/wjnse.2012.24022
%X We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.
%K Single-Electron Transistor (SET)
%K Master Equation
%K Orthodox Theory
%K Tunnel Current
%K Thermionic Current
%K SIMON
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=25311