%0 Journal Article
%T Electrophysical Properties of Ge/Cr Thin Films
%A M.S. Desai
%A L.V. Odnodvorets
%A C.J. Panchal
%A I.Yu. Protsenko
%J Journal of Nano- and Electronic Physics
%D 2011
%I Sumy State University
%X Electrophysical properties of the two-layer film systems based on Ge and Cr as two-layer film a-Ge/Cr/S or over Ge/Cr/S are studied. It is found that at a limited thickness of dGe ¡Ö 10-15 nm there is an inversion of sign value of ¦¤R/R = [R(Ge/Cr) ¨C R(Cr)]/R(Cr) from ¦¤R/R < 0 (for dGe ¡Ö 10-15 nm) to ¦¤R/R > 0 (for dGe ¡Ö 10-15 nm). This result is explained by the formation of excitons of Wannier-Mott type that leads to a decrease in the concentration of free-carriers and, as a result of it, to the increase in the value of ¦¤R/R.
%K Cr
%K Ge
%K Two-Layer Film
%K Conductivity
%K Electrophysical Properties
%K Exciton of Wannier-Mott
%U http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_232-235.pdf