%0 Journal Article
%T Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
%A Usha£¿Parihar
%A N.£¿Padha
%A C.J.£¿Panchal
%J Journal of Nano- and Electronic Physics
%D 2013
%I Sumy State University
%X Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C ¨C 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed.
%K Polycrystalline
%K schottky diodes
%K Flash evaporation
%K Current-voltage (I-V)
%K Capacitance-voltage (C-V) characteristics
%K Image force
%K Dipole lowering effects
%K Interface states
%K M-S junction templat
%U http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02015.pdf