%0 Journal Article
%T Electrical Transport Characteristics of Pd/V/N-InP Schottky Diode From I-V-T and C-V-T Measurements
%A S. Sankar Naik
%A V. Rajagopal Reddy
%J Journal of Nano- and Electronic Physics
%D 2011
%I Sumy State University
%X The temperature dependence of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/V contacts on undoped n-type InP Schottky barrier diodes (SBDs) have been systematically investigated in the temperature range of 200-400 K. The transition metal palladium (Pd) is used as a second contact layer because it has high work function, it reacts with InP at low temperatures and improved contact morphology. The ideality factor (n) and zero-bias barrier height are found to be strongly temperature dependent and while the zero-bias barrier height ¦µbo (I-V) increases, the ideality factor n decreases with increasing temperature. The experimental values of BH and n for the devices are calculated as 0.48 eV (I-V), 0.85 eV (C-V) and 4.87 at 200 K, 0.65 eV (I-V), 0.69 (C-V) eV and 1.58 at 400 K respectively. The I-V characteristics are analyzed on the basis of thermionic emission (TE) theory and the assumption of Gaussian distribution of barrier heights due to barrier inhomogeneities that prevail at the metal-semiconductor interface. The zero-bias barrier height ¦µbo versus 1/2kT plot has been drawn to obtain the evidence of a Gaussian distribution of the heights and the values of ¦Õ=0.89 eV and ¦Ò0= 145 meV for the mean barrier height and standard deviation. The conventional Richardson plot exhibits non-linearity with activation energy of 0.53 eV and the Richardson constant value of 4.25 ¡Á 10¨C 6 Acm¨C 2 K¨C 2. From the C-V characteristics, measured at 1 MHz the capacitance was determined to increase with increasing temperature. C-V measurements have resulted in higher barrier heights than those obtained from I-V measurements. As a result, it can be concluded that the temperature dependent characteristic parameters for Pd/V/n-InP SBDs can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.
%K Pd/V Schottky contacts
%K n-type InP
%K Temperature dependent I-V and C-V measurements
%K Gaussian distribution
%K barrier inhomogeneity.
%U http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1048-1055.pdf