%0 Journal Article
%T Mn DOPING OF GaN LAYERS GROWN BY MOVPE
%A Petr £¿imek
%A Zden¨§k Sofer
%A David Sedmidubsky
%A Ond£¿ej Jankovsky
%J Ceramics-Silik¨¢ty
%D 2012
%I Academy of Sciences of the Czech Republic
%X In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)2Mn was used as a Mn ¨C precursor. The flow of the Mn precursor was 0.2-3.2 ¦Ìmol.min-1. The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar, the temperature 1050 ¡ãC and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer¡¯s properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.
%K Metalorganic vapor phase epitaxy
%K Nitrides
%K Magnetic materials
%K Semiconducting III -V materials
%U http://www.ceramics-silikaty.cz/2012/pdf/2012_02_122.pdf