%0 Journal Article
%T <i>In-Situ</i> Monitoring of Chemical Vapor Deposition from Trichlorosilane Gas and Monomethylsilane Gas Using Langasite Crystal Microbalance
%A Hitoshi Habuka
%A Yurie Tanaka
%J Journal of Surface Engineered Materials and Advanced Technology
%P 61-66
%@ 2161-489X
%D 2013
%I Scientific Research Publishing
%R 10.4236/jsemat.2013.31A009
%X <p>
	<span>Using the langasite
crystal microbalance (LCM), the trends in film thickness produced by means of
the chemical vapor deposition using trichlorosilane gas, monomethylsilane gas
and their mixed gas were observed at 600</span><span>?C and evaluated by comparison with the information
from a transmission electron microscope (TEM). The crystalline silicon film
thickness from trichlorosilane gas was comparable to that of an amorphous
silicon carbide film from monomethylsilane gas. The film obtained from the gas
mixture was amorphous and was the thinnest in this study. Because the thickness
trend obtained by the LCM agreed with that by the TEM, the LCM is shown to be a
convenient evaluation tool for the behavior of various film deposition.</span><span></span> 
</p>
%K Chemical Vapor Deposition
%K In-Situ Measurement
%K Langasite Crystal Microbalance
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=28528