%0 Journal Article
%T A Transparent PN Junction Based on Tin-antimony Oxide Films
%A JI Zhen-Guo
%A ZHOU Rong-Fu
%A MAO Qi-Nan
%A HUO Li-Juan
%A CAO Hong
%J 无机材料学报
%D 2009
%I Science Press
%R 10.3724/sp.j.1077.2009.09217
%X Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the banda2gap of all TAO films with various Sn/Sb ratios is almost identical (~3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.
%K transparent semiconductive films
%K antimony-tin oxide
%K PN junction
%U http://www.jim.org.cn/fileup/PDF/20090635.pdf