%0 Journal Article
%T R-plane Sapphire Substrate for Non-polar GaN Film
%A YANG Xin-Bo
%A XU Jun
%A LI Hong-Jun
%A BI Qun-Yu
%A CHENG Yan
%A SU Liang-Bi
%A ZHOU Guo-Qing
%J 无机材料学报
%D 2009
%I Science Press
%R 10.3724/sp.j.1077.2009.00783
%X R-plane sapphire used for epitaxial growth of non-polar GaN film was grown by the temperature gradient technique (TGT) method and chemical mechanical method was used to polish the r-plane sapphire substrate. The crystallization quality, optical property and surface roughness of as-obtained r-plane sapphire substrate were investigated. The average full width at half maximum (FWHM) of the substrate is 19.4arcsec and the dislocation density is 5.6  03cm-2. The transmission of the substrate is higher than 80% when the wavelength is longer than 300nm and the optical homogeneity is 6.6  0-5. The average surface roughness of the r-plane sapphire substrate is 0.49nm. The results indicate that as-obtained r-plane sapphire substrate meets the basic standard of GaN substrate.
%K r-plane sapphire
%K non-polar GaN
%K substrate
%U http://www.jim.org.cn/fileup/PDF/20090428.pdf