%0 Journal Article
%T CNFET Based Basic Gates and a Novel FullAdder Cell
%A Fazel Sharifi
%A Amir Momeni
%A keivan Navi
%J International Journal of VLSI Design & Communication Systems
%D 2012
%I Academy & Industry Research Collaboration Center (AIRCC)
%X In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposeddesigns with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).
%K CNFET
%K MOSFET
%K Full-Adder cell
%K Basic gates.
%U http://airccse.org/journal/vlsi/papers/3312vlsics02.pdf