%0 Journal Article
%T Efecto de la distribuci¨®n superficial de potencial el¨¦ctrico en GaAs, debida a un potencial el¨¦ctrico externo, sobre im¨¢genes de electrones secundarios en microscop¨ªa electr¨®nica de barrido
%A David A. Miranda
%A S. A. L¨®pez-Rivera
%A A. E. Mora
%J Avances en Qu¨ªmica
%D 2011
%I Universidad de los Andes
%X The effects upon the images of secondary electrons, back-scattered electrons and energy dispersive spectroscopy (EDS) spectrum, due to an external electrical potential applied to a GaAs semiconductor surface, were studied. The potential distribution over the semiconductor surface was modeled by finite elements. Significant similarities between the model and secondary electrons images were observed. The results show that the GaAs surface electrical potential distribution affects the images of secondary electrons, but it does not affect the images of neither the backscattering electrons nor the EDS.
%K EDS images
%K GaAs semiconductor
%K electrical potential distribution
%K backscattering electrons
%U www.saber.ula.ve/bitstream/123456789/33367/1/articulo2.pdf