%0 Journal Article
%T A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
%A Orazio Aiello
%A Franco Fiori
%J Sensors
%D 2013
%I MDPI AG
%R 10.3390/s130201856
%X This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
%K current sensor
%K CMOS integrated circuit
%K smart power
%K electromagnetic interference (EMI)
%K electromagnetic compatibility (EMC)
%K senseFET
%K miller effect
%U http://www.mdpi.com/1424-8220/13/2/1856