%0 Journal Article
%T Localized Fabrication of Self-Assembled Quantum Structures on photolithographically patterned surfaces with the surface modulation of only 35nm
%A J. H. Lee
%A Zh. M. Wang
%A B. L. Liang
%A W. T. Black
%A Vas P. Kunets
%A Yu I. Mazur
%A and G. J. Salamo
%J OAtube Nanotechnology
%D 2008
%I 
%X Semiconductor quantum nanostructures with two and three dimensional confinement have received significant attention due to their unique physical, optical and electronic properties [1-5], which have led to many device applications [6-8]. For some device applications, localized fabrication of quantum structures is of necessary. To realize localization of quantum nanostructures, photolithographically patterned surface can provide a successful route for the nucleation to generate tailored quantum nanostructures and the ensembles of quantum nanostructures. Therefore, the use of nano-scale patterns to guide the formation of nano- and quantum-structures has attracted considerable attentions [9-12]. To date, most investigations to generate ordered arrays of quantum nanostructures have been demonstrated on deeply patterned substrates that are on the order of a few hundred nanometers to microns in depth.In this work, we present localized formations of several quantum structures including self-assembled InAs quantum dots (QDs) and GaAs quantum wires on photolithographically nano-patterned GaAs (100) surfaces using molecular-beam epitaxy (MBE). In distinction from the former works [9-12], the presented results were demonstrated on nano-scale shallow patterns of only 35nm, which can potentially provide flexibility on quantum-structures based device fabrication.
%K Quantum Nanostructures
%U http://www.oatube.org/2008/09/jhlee.html