%0 Journal Article
%T Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon
%A Jianwei Wang
%A Tianling Ren
%A Yixu Song
%A Xiaodi Deng
%J International Journal of Applied Physics and Mathematics
%D 2013
%I IACSIT Press
%R 10.7763/ijapm.2013.v3.176
%X Molecular dynamics simulation of the reactionsbetween gaseous fluorine atoms and silicon are performed usingthe development Tersoff-Brenner potential at the temperaturefrom 500K to 1200K. The simulation results show that the Sisurface temperature significantly affects the F etching. Forinstance, as the surface temperature rises up, the numbers of Fatoms deposited on and scattered by Si surface decrease, at thesame times, the number of the sputtering fluorine atoms and thereactive F atoms with surface to produce volatile compoundsincrease. In addition, the quantity of the F etched Si atomsincreased with an increase of the surface temperature
%K Molecular dynamics
%K etching
%K temperature
%K silicon
%K fluorine
%U http://www.ijapm.org/papers/176-ST0032.pdf