%0 Journal Article
%T Graphene Doping: A Review
%A Beidou Guo
%A Liang Fang
%A Baohong Zhang
%A Jian Ru Gong
%J Insciences Journal
%D 2011
%I Insciences Organisation
%X Graphene, a new material for the electron-device community, has many extraordinary properties. Especially, it provides a perfect platform to explore the unique electronic property in absolutely two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Herein, a brief review is given on the recent research progress of graphene doping, which is roughly divided into three categories: First, the hetero atom doping, including arc discharge, chemical vapor deposition, electrothermal reaction and ion-irradiation approaches; Second, the chemical modification strategy; Third, the method of electrostatic field tuning. In addition, the various potential applications of the above doping methods are also introduced.
%K doping
%K electronic property
%K electrostatic field
%K graphene
%K molecular modification
%U http://journal.insciences.org/1664-171x-1-2-80/