%0 Journal Article
%T Record Endurance for Single-Walled Carbon Nanotube¨CBased Memory Cell
%A Di Bartolomeo A
%A Yang Y
%A Rinzan MBM
%A Boyd AK
%J Nanoscale Research Letters
%D 2010
%I Springer
%X We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10 6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
%K Carbon nanotube
%K Field-effect transistor
%K Memory
%K Hysteresis
%K Endurance
%K Data retention
%U http://dx.doi.org/10.1007/s11671-010-9727-6