%0 Journal Article
%T Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons
%A Zhang Huan
%A Ding Weiqiang
%A He Kai
%A Li Ming
%J Nanoscale Research Letters
%D 2010
%I Springer
%X In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500¡ãC for 5¨C12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite¨Ctype SiC (2H-SiC) with a growth direction of . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor¨Csolid reaction dominated nanoribbon growth mechanism was discussed.
%K Silicon carbide
%K Nanomaterial synthesis
%K Nanoribbon
%K Nanobelt
%K Hexagonal wurtzite
%U http://dx.doi.org/10.1007/s11671-010-9635-9