%0 Journal Article
%T The Microscopic Origin of Residual Stress for Flat Self-Actuating Piezoelectric Cantilevers
%A Lee Jeong
%A Hwang Kyo
%A Kim Tae
%J Nanoscale Research Letters
%D 2011
%I Springer
%X In this study, flat piezoelectric microcantilevers were fabricated under low-stress Pb(Zr0.52Ti0.48)O3 (PZT) film conditions. They were analyzed using the Raman spectrum and wafer curvature methods. Based on the residual stress analysis, we found that a thickness of 1 ¦Ìm was critical, since stress relaxation starts to occur at greater thicknesses, due to surface roughening. The (111) preferred orientation started to decrease when the film thickness was greater than 1 ¦Ìm. The d33 value was closely related to the stress relaxation associated with the preferred orientation changes. We examined the harmonic response at different PZT cantilever lengths and obtained a 9.4-¦Ìm tip displacement at 3 Vp-p at 1 kHz. These analyses can provide a platform for the reliable operation of piezoelectric microdevices, potentially nanodevice when one needs to have simultaneous control of the residual stress and the piezoelectric properties.
%K Nanomechanics
%K Residual stress
%K Piezoelectric
%K Cantilever
%K Biosensor
%U http://www.nanoscalereslett.com/content/6/1/55