%0 Journal Article
%T Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix
%A Wan Zhenyu
%A Huang Shujuan
%A Green Martin
%A Conibeer Gavin
%J Nanoscale Research Letters
%D 2011
%I Springer
%X In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100ˇăC. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.
%U http://www.nanoscalereslett.com/content/6/1/129