%0 Journal Article
%T Characterization of Defect Traps in SiO2 Thin Films
%A Jean-Yves Rosaye
%A Pierre Mialhe
%A Jean-Pierre Charles
%A Mitsuo Sakashita
%A Hiroya Ikeda
%A Akira Sakai
%A Shigeaki Zaima
%A Yukio Yasuda
%J Active and Passive Electronic Components
%D 2001
%I Hindawi Publishing Corporation
%R 10.1155/2001/57872
%X In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiOx, area and at the SiO2 interface. For this purpose, a new measurement technique to study slow-state traps and their relationship with fast-state traps is developed. This method considers capacitance-voltage measurements and temperature effects during the hysteresis cycle.
%U http://www.hindawi.com/journals/apec/2001/057872/abs/