%0 Journal Article
%T Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
%A M. Ciorga
%A C. Wolf
%A A. Einwanger
%A M. Utz
%J AIP Advances
%D 2011
%I AIP Publishing LLC
%R 10.1063/1.3591397
%X We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+  (Ga,Mn)As/n+  GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 ¦¸ which is twice the magnitude of the measured non-local signal.
%U http://link.aip.org/link/doi/10.1063/1.3591397