%0 Journal Article
%T Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
%A Xi Zou
%A Hock Guan Ong
%A Lu You
%A Weigang Chen
%J AIP Advances
%D 2012
%I AIP Publishing LLC
%R 10.1063/1.4754150
%X Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials.
%U http://link.aip.org/link/doi/10.1063/1.4754150