%0 Journal Article
%T Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
%A K. Wang
%A G. Tai
%A K. H. Wong
%A S. P. Lau
%J AIP Advances
%D 2011
%I AIP Publishing LLC
%R 10.1063/1.3602855
%X We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 ˇăC. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2 each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
%U http://link.aip.org/link/doi/10.1063/1.3602855