%0 Journal Article
%T Growth of ¡«5 cm2V 1s 1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225¡ãC and below
%A D. Mu£¿oz-Rojas
%A M. Jordan
%A C. Yeoh
%A A. T. Marin
%J AIP Advances
%D 2012
%I AIP Publishing LLC
%R 10.1063/1.4771681
%X Phase pure, dense Cu2O thin films were grown on glass and polymer substrates at 225¡ãC by rapid atmospheric atomic layer deposition (AALD). Carrier mobilities of 5 cm2V 1s 1 and carrier concentrations of ¡«1016 cm 3 were achieved in films of thickness 50 - 120 nm, over a >10 cm2 area. Growth rates were ¡«1 nm¡¤min 1 which is two orders of magnitude faster than conventional ALD.. The high mobilities achieved using the atmospheric, low temperature method represent a significant advance for flextronics and flexible solar cells which require growth on plastic substrates.
%U http://link.aip.org/link/doi/10.1063/1.4771681