%0 Journal Article
%T Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material
%A D. K£¿nig
%A J. Rudd
%J AIP Advances
%D 2013
%I AIP Publishing LLC
%R 10.1063/1.4789397
%X Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1 xN (0   x   1) with Si is an established process. Material properties and process compatibility of AlxGa1 xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4.
%U http://link.aip.org/link/doi/10.1063/1.4789397