%0 Journal Article
%T A curvature-corrected CMOS bandgap reference
%A O. Mitrea
%A C. Popa
%A A. M. Manolescu
%A M. Glesner
%J Advances in Radio Science : Kleinheubacher Berichte
%D 2003
%I Copernicus Publications
%X This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35¦Ìm 3Metal/2Poly CMOS technology and the chip area is approximately 70¦Ìm ¡Á 110¦Ìm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10¨C 90¡ãC while the power consumption is less than 1.4mW.
%U http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf