%0 Journal Article
%T Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack
%A Gomeniuk Yu.Y.
%A Nazarov A.N.
%A Monaghan S.
%A Cherkaoui K.
%J Proceedings of the International Conference Nanomaterials : Applications and Properties
%D 2012
%I Sumy State University
%X The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxide-semiconductor (MOS) structure, namely Pd/Al2O3/ InGaAs/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon.
%K Thin-film synthesis
%K Thin-film properties
%K Nanothickness
%K Nanostructured matter
%U http://nap.sumdu.edu.ua/index.php/nap/nap2012/paper/view/729