%0 Journal Article
%T MATERIAL ELEMENT MODEL FOR EXTRINSIC SEMICONDUCTORS WITH DEFECTS OF DISLOCATION
%A Maria Paola Mazzeo
%A Liliana Restuccia
%J Mathematics and its Applications : Annals of the Academy of Romanian Scientists
%D 2011
%I Academy of Romanian Scientists Publishing House
%X In a previous paper we outlined a geometric model for the thermodynamic description of extrinsic semiconductors with defects of dislocation.Applying a geometrization technique, within the rationalextended irreversible thermodynamics with internal variables, the dynamical system for simple material elements of these media, the expressions of the entropy function and the entropy 1-form were obtained. In this contribution we deepen the study of this geometric model. We give a detailed description of the defective media under consideration and of the dislocation core tensor, we introduce the transformation induced by the process and, applying the closure conditions for the entropy 1-form, we derive the necessary conditions for the existence of the entropy function. These and other results are new in the paper.The derivation of the relevant entropy 1-form is the starting point to introduce an extended thermodynamical phase space.
%K Extended and rational irreversible thermodynamics
%K extrinsic semiconductors
%K solids with defects
%K dislocations.
%U http://www.mathematics-and-its-applications.com/preview/july2011/data/11_Mazzeo_Restuccia.pdf