%0 Journal Article
%T Studies of phosphorus Gaussian profile emitter silicon solar cells
%A Stem N.
%A Cid M.
%J Materials Research
%D 2001
%I ABM, ABC, ABPol, SBCC, SBCr, SBMM, SBPMat
%X Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (h @ 21.60-21.74%)with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 W/ ) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable.
%K solar cell efficiencies-1
%K homogeneous emitter-2
%K non-homogeneous emitter-3
%K Gaussian profile-4
%U http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000200018