%0 Journal Article
%T Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor
%A Nam-Young Kim
%A Cong Wang
%A Sung-Jin Cho
%J Transactions on Electrical and Electronic Materials
%D 2013
%I Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
%X In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobilitytransistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding theohmic contact and pre-metal-deposition BCl3 etching processes were evaluated in terms of the device performance.In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization schemeunder different rapid thermal annealing (RTA) temperature and time. A BCl3-based reactive-ion etching (RIE)method was performed before the ohmic metallization, since this approach was shown to produce a better ohmiccontact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ¦Ìm gate length was fabricated using this novelmanufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductanceof 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).
%K AlGaN/GaN
%K High electron mobility transistor (HEMT)
%K Ohmic contact
%K SiC substrate
%K Reactive-ion etching (RIE)
%U http://dx.doi.org/10.4313/TEEM.2013.14.1.32