%0 Journal Article
%T Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs
%A Ga-Won Lee
%A Yu-Mi Kim
%A Kwang-Seok Jeong
%A Ho-Jin Yun
%J Transactions on Electrical and Electronic Materials
%D 2012
%I Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
%X In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positivebias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred asthe stress time increased. The hump became more serious in higher gate bias stress while it was not observed underthe negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influencedby the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.
%K IGZO
%K Anomalous hump
%K Bias stress
%K NBS
%K PBS
%K Thin film transistor (TFT)
%U http://dx.doi.org/10.4313/TEEM.2012.13.1.47