%0 Journal Article
%T Bandgap Alteration of Transparent Zinc Oxide Thin Film with Mg Dopant
%A M. Salina
%A R. Ahmad
%A A. B. Suriani
%A M. Rusop
%J Transactions on Electrical and Electronic Materials
%D 2012
%I Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
%X We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopantby using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrementvalue in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thinfilm at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomesbigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in theI-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lowerconductivity. These findings may be useful in optoelectronics devices.
%K ZnO
%K MgZnO
%K Optical band gap
%K Thin film
%U http://dx.doi.org/10.4313/TEEM.2012.13.2.64