%0 Journal Article
%T Electrical Characteristic of Power MOSFET with Zener Diode for Battery Protection IC
%A Nam-Soo Kim
%A Jung-Woong Park
%A Kie-Yong Lee
%A Hyung-Gyoo Lee
%J Transactions on Electrical and Electronic Materials
%D 2013
%I Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
%X A high power MOSFET switch based on a 0.35 ¦Ìm CMOS process has been developed for the protection IC of arechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ¦Ìm-thick epi-taxy layer isintegrated with a Zener diode. The p-n+ Zener diode is fabricated on top of the VDMOS and used to protect theVDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with powerdevices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltageand leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdownvoltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltageis obtained to exceed 14 V and the leakage current is controlled under 0.5 ¦ÌA. The proposed integrated module withthe application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delaytime and detection voltage are controlled within 1.1 s and 4.2 V, respectively.
%K Power MOSFET
%K Protection IC
%K Zener diode
%K Breakdown
%K Leakage
%U http://dx.doi.org/10.4313/TEEM.2013.14.1.47