%0 Journal Article
%T Einstein Relation of Two Dimensional Strained Si/Si1-x Gex MOSFETs in Nondegenerate Regime and Degenerate Regime
%A Eng Siew Kang
%A Fatimah Abdul Hamid
%A Razali Ismail
%J International Journal of Nano Devices, Sensors and Systems
%D 2012
%I Institute of Advanced Engineering and Science
%R 10.11591/ij-nano.v1i1.394
%X The carrier propagation in quasi two dimensional strained silicon is quantum confined in the direction normal to the channel; while has the analog energy spectrum in the other two Cartesian direction. In this paper, we report the Einstein relation that relates the diffusivity to the carrier mobility of two dimensional strained silicon for both the nondegenerate regime and degenerate regime. The germanium fraction, x in the relaxed Si1-xGex is taken to be 20%. The Fermi Dirac distribution function in the form of Fermi integral order zero,  is employed in developing the carrier statistic and the intrinsic velocity. It was demonstrated that the Einstein Relation is related to the channel width in nondegenerate regime but in degenerate regime, it is related to the channel width, carrier concentration and the effective density of state. Also, the intrinsic velocity shows the carrier concentration dependence behavior in the degenerate regime but is dependence of the temperature in the nondegenerate regime.
%K Strained silicon
%K nondegenerate
%K degenerate
%K carrier statistics
%K intrinsic velocity
%U http://iaesjournal.com/online/index.php/IJ-Nano/article/view/394