%0 Journal Article
%T Performances Comparison of Si, GaAs and GaN based Resonant Tunneling Diode in Presence and Absence of Electric Field
%A Subhra Chowdhury
%A Dhrubes Biswas
%J International Journal of Nano Devices, Sensors and Systems
%D 2012
%I Institute of Advanced Engineering and Science
%R 10.11591/ij-nano.v1i2.1324
%X A semi-empirical analytical model of Si/SixGe1-x, GaAs/AlxGa1-xAs and GaN/AlxGa1-xN resonant tunneling diode (RTD) is presented in this paper. Transmission coefficient (Tc) is an important factor for determining the performance of a resonant tunneling diode. Variation of transmission coefficient with electron energy and other device parameters are predicted with the help of this model. Comparison of performance characteristics of these three devices are made for different barrier width and well width in presence and absence of applied electric field using transfer matrix method.
%K RTD
%K Transmission coefficient
%K Si/SiGe
%K GaAs/AlGaAs
%K GaN/AlGaN
%K Applied electric field
%U http://iaesjournal.com/online/index.php/IJ-Nano/article/view/1324