%0 Journal Article
%T SOI DEVICE SIMULATION OF AN AREA  EFFICIENT BODY CONTACT
%A Arash Daghighi
%A £¿Mohamed A. Osman£¿
%J Majlesi Journal of Electrical Engineering
%D 2007
%I Islamic Azad University- Majlesi
%R 10.1234/mjee.v1i1.52
%X We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.
%K Three-Dimensional Simulation - Floating Body Effects - On-resistance - Breakdown Voltage -  Isothermal Drift-Diffusion Model ¨C Cutoff Frequency.
%U http://ee.majlesi.info/index/index.php/ee/article/view/52