%0 Journal Article
%T Electric parametres of SiC p每i每n-diodes in the 77〞773 K temperature range
%A Basanets V. V.
%A Belyaev A. E.
%A Boltovets N. S.
%A Konakova R. V.
%J Tekhnika i Pribory SVCh
%D 2011
%I 
%X The experimental results of investigation of the principal parameters and characteristics of silicon carbide p每i每n-diodes in the 77〞773 K temperature range are presented. The functionality of p每i每n-diode included into a strip modulator at temperature below +500∼C is demonstrated.
%K SiC p每i每n-diode
%K base resistance
%K capacitance
%K switching time
%U http://www.tkea.com.ua/svc/2011/2_2011/pdf/06.zip