%0 Journal Article
%T Phase shifter 0-¦Ð on 4HSiC p¨Ci¨Cn-diodes
%A Boltovets N. S.
%A Krivutsa V. A.
%A Lychman K. A.
%A Zekentes K.
%J Tekhnika i Pribory SVCh
%D 2011
%I 
%X The paper presents the results of studying the parameters of the phase shifter with a phase shift from 0 to ¦Ð on the basis of two microwave 4HSiC p¨Ci¨Cn-diodes. Diodes have a breakdown voltage of 500¡ª700 V at 20 mA reverse current, the resistance of 2,5¡ª3,0 ohms at forward current of 100 mA, capacity of 0,3 pF at reverse voltage of 40 V and switching time from direct current of 100 mA to reverse voltage 15 V 20 ns. In the frequency range of 2,4¡ª2,6 GHz the phase shifter loss with a phase shift of 0¡ã are 0,8¡ª1,3 dB, and with a phase shift 175¡ª179,5¡ã are 1,7¡ª2,5 dB.
%K 4HSiC p-i-n-diode
%K capacity
%K breakdown voltage
%K phase shift
%K impedance
%K phase shifter 0-¦Ð
%U http://www.tkea.com.ua/svc/2011/2_2011/pdf/04.zip