%0 Journal Article
%T Pulse power single-diode microwave oscillator based on Ka-band silicon IMPATT diodes
%A Tarasyuk V. M.
%A Basanets V. V.
%A Boltovets M. S.
%A Zorenko O. V.
%J Tekhnika i Pribory SVCh
%D 2011
%I 
%X The test results of prototype of Ka-band silicon double-drift power IMPATT diodes are presented. These diodes are intended for making IMPATT oscillators with pulse power more than 35 W at 300 ns pulse width.
%K double-drift avalanche-transit diode (ATD)
%K pulse mode
%K ATD-based generator
%U http://www.tkea.com.ua/svc/2011/1_2011/pdf/06.zip