%0 Journal Article
%T Comparison of Steady State Electron Transport Properties in Binary Nitride Materials Using Three Valley Monte Carlo Model
%A Hadi ARABSHAHI
%A Elham JABERI
%A Hossain TAYARANI
%J Leonardo Journal of Sciences
%D 2012
%I AcademicDirect
%X An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN, AlN and InN. For all materials we found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field .This critical field is strongly dependent on the material parameters. For example about 0.74กม107 Vm-1 for the case of InN, 2.79กม107 Vm-1 for AlN and 1.74กม107 Vm-1 for GaN. At higher electric fields the drift velocity decreases eventually saturating at around 2.03กม105 ms-1 for both GaN and AlN and 1.8กม105 ms-1 for InN.
%K Ensemble Monte Carlo
%K Overshoot
%K Critical Field
%K Drift Velocity
%U http://ljs.academicdirect.org/A20/071_078.pdf