%0 Journal Article
%T Design of Broadband Low Noise Amplifier Based on HEMT Transistors in the X-Band
%A Mohammed Lahsaini
%A Lahbib Zenkouar
%A Seddik Bri
%J International Journal of Engineering and Technology
%D 2013
%I Engg Journals Publications
%X In this paper, we have modeled a low noise amplifier LNA based on HEMT transistors of Alpha Industries , adapted by band pass filters in the X-band. A detailed study of performance optimizations for stability and noise of the different adaptation circuits was established. This amplifier is two-stage circuit. It is unconditionally stable in the band [8-12] GHz with a gain greater than 22.48 dB, a noise figure less than 1.1 dB and reflection coefficients at the input and output (S11, S22) less than -20 dBand - 40 dB respectively. The amplifier designed can be integrated in radar systems, amateur radio and civil and military radiolocation systems.
%K LNA
%K Adaptation
%K T and PI Circuits
%K Filters
%K Stability
%K Noise
%K Gain
%U http://www.enggjournals.com/ijet/docs/IJET13-05-01-053.pdf