%0 Journal Article
%T High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
%A Kamil Kosiel
%A Jan Muszalski
%A Anna Szerling
%A Maciej Bugajski
%J Optica Applicata
%D 2007
%I 
%X A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diodes. The active region of laser diode was formed as strained, 8 nm thick, quantum well (QW) InGaAs layer. The AlGaAs layers of graded composition and graded refractive index (GRIN) formed the waveguide. Lasers were processed into wide stripe (W = 100 ¦Ìm) mesas and were mounted on copper submounts and Peltier thermoelements in the standard TO-3 transistor housing. For stabilization of laser output, a silicon photodiode was placed next to a laser chip in the same case. Typical threshold current densities were 150 A/cm2, and the quantum efficiencies were of the order of 0.8 W/A. Lasers may work in pulsed regime as well as in CW regime with guaranteed optical power of 1 W at 300 K. The record threshold current densities achieved for 700 ¦Ìm cavity were as low as 130 A/cm2 and the characteristic temperature was T0 = 200 K.
%K high power semiconductor laser
%K graded refractive index separate confinement heterostructure (GRINSCH)
%K threshold current
%K external efficiency
%K parameter T0
%K Auger recombination
%K spontaneous radiative recombination
%K nonradiative recombination
%U http://www.if.pwr.wroc.pl/~optappl/pdf/2007/no4/optappl_3704p423.pdf