%0 Journal Article
%T Properties of AlNx thin films prepared by DC reactive magnetron sputtering
%A Andrzej Stafiniak
%A Donata Muszynska
%A Adam Szyszka
%A Bogdan Paszkiewicz
%J Optica Applicata
%D 2009
%I 
%X In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.
%K aluminum nitride (AlN)
%K thin films
%K reactive magnetron sputtering
%K alternative dielectrics
%U http://www.if.pwr.wroc.pl/~optappl/pdf/2009/no4/optappl_3904p717.pdf