%0 Journal Article
%T Ta-doped In<sub>2</sub>O<sub>3</sub> transparent conductive films with high transmittance and low resistance
%A Biao Wang
%A LiMing Hu
%A FengMin Liu
%A Li Qin
%J Optica Applicata
%D 2010
%I 
%X Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8¡Á10¨C4 ¦¸cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.
%K sputtering
%K In<sub>2</sub>O<sub>3</sub>
%K transparent conductive oxide
%K thin films
%U http://www.if.pwr.wroc.pl/~optappl/pdf/2010/no1/optappl_4001p25.pdf