%0 Journal Article
%T Structural, electrical and optical properties of AZO/SiO<sub>2</sub>/<em>p</em>-Si SIS heterojunction prepared by magnetron sputtering
%A HeBo
%A ZhongQuanMa
%A XuJing
%A ZhaoLei
%J Optica Applicata
%D 2010
%I 
%X ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The microstructure, optical and electrical properties of the Al-doped ZnO films were characterized by XRD, SEM, UV-VIS spectrophotometer, current¨Cvoltage measurement, and four point probe technique, respectively. The results show that AZO films are of good quality. The electrical junction properties were investigated by I¨CV measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 24.42 and 8.92ˇÁ10¨C5 A, respectively. And the values of IF/IR (IF and IR stand for forward and reverse current, respectively) at 10 V are found to be as high as 38. It shows fairly good rectifying behavior indicating formation of a diode between AZO and p-Si.
%K Al-doped ZnO (AZO)
%K sputtering
%K SIS heterojunction
%K current&ndash
%K voltage (<em>I</em>&ndash
%K <em>V</em>) characteristics
%U http://www.if.pwr.wroc.pl/~optappl/pdf/2010/no1/optappl_4001p15.pdf